View VTR16D1H_8363530.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

photon detection solutions for health, safety and security applications photon detection for tomorrows cutting-edge applications.
2 www.excelitas.com at excelitas, were sensing what you need for a healthier, cleaner and safer tomorrow. from photon counting modules to silicon detectors, ingaas detectors, and pulsed laser diodes, our photon detection technologies are addressing your high-performance and high-volume applications. we have the detection technologies and capabilities to enhance and accelerate your oem designs. you can depend on our seven world-class design, manufacturing and r&d facilities including: montreal, canada; wiesbaden, germany; fremont, usa; singapore; manila, philippines; shenzhen, china; and batam, indonesia. were sensing what you need. section 1 ? module s and optical receiver s ? spcms based on high-performing apds C for visible and nir single photon counting ? cpms and modules for lowest dark noise applications ? ccd cameras C for high speed imaging ? pin and apd hybrid receivers C for high signal detection s ection 2 ? p h otodiode a r ray s for x-ray security scanning ? photodiode solutions with scintillators for x-ray scanners s ection 3 ? p h otodiode s for h i gh- p e rfor m a nce a p plication s ? si and ingaas apds and pin photodiodes C for industrial applications and high-volume laser range fnding ? si apd arrays C for beam positioning and spectrometers ? large-area/uv-enhanced apds C for molecular imaging, high-energy radiation detection section 4 ? p hotodiode s & - t ran s i s tor s for h igh- v olu m e a pplication s ? smoke detection components ? ambient light sensors ? si-photodiodes and-transistors ? infrared switches s ection 5 ? p u l s e d l a s e r d i ode s and i n frared l eds ( i reds ) ? high power laser diodes C for laser range fnding ? infrared emiting diodes C for smoke detection and safety curtains o ur p hoton d etection solutions are contributing to: l onger, h ealthier l ives. ? luminescence and fuorescence for analytical and clinical diagnostics ? photon counting, particle sizing ? pet, ct, and mri scanning e nhanced safety and security. ? x-ray scanning of luggage, cargo and food ? laser range fnding C industrial and consumer ? smoke detection ? safety curtains making your world healthier, safer & more secure.
3 www.excelitas.com s e c t i o n 1 modules and optical receivers 4 s e c t i o n 2 14 photodiode arrays for x-ray security scanning s e c t i o n 3 16 photodiodes for high-performance applications s e c t i o n 4 24 photodiodes & -transistors for high-volume applications s e c t i o n 5 38 pulsed laser diodes and infrared leds (ireds)
m o d u l es & r e c e ive r s f o r an a l y t i c a l & mole c u l ar a p pli c a tio n s module s and optical r e ceiver s 4 a pplications ? particle sizing ? confocal microscopy ? photon correlation spectroscopy ? quantum cryptography ? astronomical observation ? optical range fnding ? adaptive optics ? ultra sensitive fuorescence f eatures and benefts ? peak photon detection effciency at 650 nm: 65 % typical ? active area: 180 m diameter ? gated output ? single +5 v supply ? fc receptacle option for fber coupling ? eu rohs compliant ? array of 4 channels available p r oduct d e scription spcm-aqrh is a self-contained module that detects single photons of light over the 400 nm to 1060 nm wavelength range - a range and sensitivity that ofen outperforms a photomultiplier tube. te spcm-aqrh uses a unique silicon avalanche photodiode (slik?) with a circular active area that achieves a peak photon detection efciency of more than 65 % at 650 nm over a 180 m diam - eter. te photodiode is both thermoelectrically cooled and temperature controlled, ensuring stabi- lized performance despite ambient temperature changes. circuit improvements have reduced the overall power consumption. count speeds exceeding 20 million counts per second (mc/s) are achieved by the spcm-aqrh-1x module (> 30 million counts per second on some models). tere is a dead time of 35 ns between pulses but other values can be set at the factory. as each photon is detected, a tl pulse of 2.5 volts (minimum) high into a 50 ohm load and 15 ns wide is output at the rear bnc connector. te module is designed to give a li near performance at a case temperature between 5? c and 40? c. te spcm is also available in a 4 channel array format, the spcm-aq4c. it is a module of 4 apds with single power supply and 4 individual outputs. tis series of photon counting modules are designed and built to be fully compliant with the euro- pean union directive 2002/95eec - restriction of the use of certain hazardous substances in elec- trical and electronic equipment (rohs). single photon counting modules (spcm) www.excelitas.com ile oto o ti oles product table part n u mber u n it sp c m -aqrh-10 sp c m -aqrh-11 sp c m -aqrh-12 sp c m -aqrh-13 sp c m -aqrh-14 sp c m -aqrh-15 sp c m -aqrh-16 sp c m -aq4 c c 3 0902sh- t c 1 c 3 0902sh-d t c 2 mm photo sensitive diameter 0.18 0.18 0.18 0.18 0.18 0.18 0.18 fibered 0.475 0.475 c/s 1500 1000 500 250 100 50 25 500 2500 350 maximum dark c o unt rate % 65 % 6 5 % 6 5 % 6 5 % 6 5 % 6 5 % 6 5 % 6 0 % > 5 % > 5 % photon detection effciency @ 700 n m c/s 25m 25m 25m 25m 25m 25m 25m >2m / c hannel - - max. c o unt rate before saturation ns 32 32 32 32 32 32 32 50 - - dead time ns 15 15 15 15 15 15 15 30 - - pulse width 1. c30902sh-tc (0o c operation), 2. c30902sh-dtc (-20o c operation) graph 1 photon detection effciency (pd) wavelength (nm) 80 70 60 50 40 30 20 10 0 300 500 700 900 1100 single photon c ounting modules C sp c m
5 www.excelitas.com package drawing C t o - 8 flange figure 3 mechanical dimensions of the sp c m -aq4 c figure 2 mechanical dimensions of the sp c m -aqrh series figure 1 ? single photon counting modules C spcm
1. p- types are photon counting suitable cpm or module types. when ordering please add -p : e.g.: c993-p, mh984-p 2. also order number c p m tube model (also as p-type 1, 2 c 9 11 c 1 311 c 1 911 c 9 22 c 1 322 c 1 922 c 9 43 c 1 343 c 1 943 c 9 84 c 1 384 c 1 984 c 9 93 c 1 393 c 1 993 c 9 63 c 1 363 c 1 963 c 9 73 c 1 373 c 1 973 u n it spectral response 115 - 200 165 - 320 185 - 650 300 - 670 185 - 750 185 - 850 185 - 900 nm active dia- meter (min.) 5 9 15 5 9 15 5 9 15 5 9 15 5 9 15 5 9 15 5 9 15 mm remarks, other available types mgfl window available quartz, boro. window available quartz window available quartz window available - dark c urrent / pa @ 1e5 0.1 0.2 0.5 0.5 1 2 2 8 20 1 4 10 2 8 20 20 80 200 100 400 1000 gain (typ.) equivalent n o ise input 1.0 e -17 2.0 e -17 3.0 e -17 1.0 e -17 2.0 e -17 3.0 e -17 1.0 e -17 2.0 e -17 3.0 e -17 6.0 e -18 1.0 e -17 2.0 e -17 1.0 e -17 2.0 e -17 3.0 e -17 4.0 e -17 8.0 e -17 1.0 e -16 1.5 e -16 3.0 e -16 5.0 e -16 (e n i )/w/ (hz) at peak resp. wavel. (typ.) peak wavelength 140 200 400 350 450 450 500 (typ., nm) dark c o unts for -p type and mh-p 0.1 0.4 1 1 4 10 10 40 100 2 10 20 5 20 50 100 400 1000 500 2000 5000 (typ.) c h annel photomultipliers & modules product table 6 a pplications ? photon counting ? luminescence & fuorescence spectroscopy ? microplate readers ? clinical diagnostics ? dna & cell analysis ? particle measurements ? industrial spectroscopy ? nucleic acid amplifcation (pcr) f eatures and benefts ? extremely low background noise ? best low light level detection limits ? high dynamic range & gain ? low microphonic & magnetic sensitivity ? compact size & rugged design ? multiple photocathode and window selections ? plug and play for shortest design-in and time-to-market ? customizations and added features available p r oduct d e scription excelitas channel photomultiplier (cpm) technology ofers a portfolio of ultra-high sensitivity op- tical detectors designed for extremely low noise, high dynamic range, highest gain and fast response for analytical, scientifc and clinical diagnostic applications. a variety of easy-to-use modules with dif- ferent read-out electronics is available, enabling customers to beneft from the unique performance characteristics of the cpm technology. depending on the application requirements, customers can select plug-and-play modules for photon counting, dc applications, photon-counting detection up to gigacount range or any other method of photon detection. added features like thermoelectric cooling, shutering and other sorts of cus- tomization are available upon request. te cpm modules are ideally suited for use in human and environmental health, supporting the market needs for ever smaller sample sizes and lower detection limits in applications like microplate readers, nucleic acid amplifcation (pcr), luminescence or fuorescence spectroscopy. c hannel photomultipliers & modules o r dering guide series mh series mh p-type md series mp series mprs series mp c series gpdm series all modules are available with optical input aperture of 9 mm (9xx-series), 13 mm (13xx-series) and 19 mm (19xx-series). modules with direct anode output (com- prising cpm and high voltage supply only) mh modules with cpm tube specially selected for photon-counting applications modules for dc measurement, analog output: 0 to 10 volts modules optimized for photon counting, digitized output via ttl interface modules optimized for photon counting, digitized output via rs232 interface temperature stabilized (te-cooled) mp modules, customized oem projects only highest dynamic range (single photon/s to 1g photon/s range) module with digital output for fuorescence and luminescence measurements and other demanding applications. p h otom u l tipliers for mole c u l ar dete c t io n i n an a l y t i c a l a p pli c a tio n s & m edi c a l d i ag n o sti c s module s and optical r e ceiver s channel photomultipliers & modules (cpm)
7 www.excelitas.com general specifcation technical specification parameter window materials photocathode materials max. input current bias current (typ.) supply voltage/ i n put voltage c u rrent amplifcation max. anode current linear anode current linear count rate (typ.) response time t r ansit time t r ansit time spread o u tput pulse width (fwhm) o v er-illumination protection o u tput impedance active gate control ga t e voltage o p erating temperature storage temperature weight o u tput remarks / c o nditions mgf2, quartz, uv glass, borosilicate csi, cste, low noise bialkali, bialkali, yellow enhanced, multialkali, extended red multialkali module input current cpm input current modules include cpm high voltage supply 6e6 (typ.), 1e8 (max.) output current (max. 30 s ec.) max. (dc linearity limit) 10 % of bias current 1 (see note 1) output pulse rise time timing resolution / j itter typical value active gate control termination for fast output pulse ttl-pulse, active high ttl-level: low to high / h igh to low +5 to +40 c (other temperatures on request) -20 to +50 c m ax. 350 g / 4 20 g / 4 50 g ( modules 9xx-series/13xx-series/19xx-series) symbol i dd i bias v dd i anode i lin cps lin t resp tt tts pw v gate t op t store c p m (tube) ? ? 40 2000 v ( typ.) 2600 v ( max.) ? 10 ? 17 6 50 ? ? ? anode signal mh-module mh-p-type ? ? 200 +5 to +5.5 (max.) ? 10 ? 17 6 50 ? 100 / 3 00 ? ? anode sig. md ? ? 250 +5 to +5.5 (max.) ? ? ? 100 / 3 00 ? ? 0C10 v mp mp c ? ? 250 +5 to +5.5 (max.) ? 20 20 ? 50 ? 0.02 / 0 .02 ? ? ttl mprs ? ? 250 +5 to +5.5 (max.) ? 10 ? ? ? ? rs232 gpdm ? ? 300 +5 to +5.5 (max.) (see note 3) 1000 ? digital ? 100 / 3 00 ? ? usb/spi u n it ma a volts dc a mcps ns ns ns ns ohms s 1. for long term operation: max. average output count rate of < 100 kcps (anode current of < 100 na) is recommended 2. cooling input power: 9 vdc /3.5 a fan input power: 24 vdc / 100 ma 3. gain setting depending on operating mode C see separate datasheet channel photomultipliers & modules 1e-14 1e-15 1e-16 1e-17 1e-18 e n i (w) wavelength (nm) e q uivalent n o ise i n put graph 2 CC c 9 11 CC c 9 22 CC c 9 42 CC c 9 62 CC c 9 72 CC c 9 82 CC c 9 92 100 200 900 300 400 500 600 700 800 wavelength (nm) 100 200 900 300 400 500 600 700 800 quantum effciency (%) 100 10 1 0.1 spectral response graph 1 CC c 9 11 CC c 9 21 CC c 9 22 CC c 9 43/ 9 42 CC c 9 43 CC c 9 44 CC c 9 63/ 9 62 CC c 9 73/ 9 72 CC c 9 73 CC c 9 73- 1 3 CC c 9 83/ 9 82 CC c 9 83 CC c 9 93/ 9 92 housing / package drawings technical specification dimensions (mm) module type 9xx 13xx 19xx a 4.5 4.5 4.5 b 36 36 36 c 4.5 7 7 d 33 33 33 e 127 132 137 f 120 125 130 g 30 30 30 h 20 20 20 i 19.5 19 19 j 10 10 10 k 18 22.1 22.1 l 45 50 50 m 45 50 50
a pplications ? multimodal analytical measurements ? luminescence spectroscopy ? time-resolved fuorescence ? high through-put screening ? dna & cell analysis ? microplate reading f eatures and benefts ? extremely low background noise ? highest dynamic range ? high gain ? 4 different operating modes ? variable interface options ? best suited for multimodal analytical applications p r oduct d e scription te new cpm gigahertz photon detection module (gpdm) provides the capability of ultra low-light-level detection in dc mode operation. using dc mode operation with single-photon- sensitivity makes the gpdm module superior to traditional counting circuits with their performance limitation at high-light-levels. te fully equipped module includes the channel photomultiplier, the high voltage supply, analog current amplifer, a to d conversion and a microcontroller with usb/spi interface allowing the optimal adaptation to a wide range of applications. additional fea- tures like the synchronization i/o ofer the possibility to synchronize the measurement with other devices in the application like fash lamp trigger etc. utilizing the generic noise advantage of the cpm technology together with highest dynamic range electronics the gpdm represents a real innovation in photon detection, well suited to increase overall oem system performance. p h otom u l tipliers for mole c u l ar dete c t io n i n an a l y t i c a l a p pli c a tio n s & m edi c a l d i ag n o sti c s gigahertz photon detection module technical specification parameter c o ndition max u n its supply voltage supply current detection range 1 switching dead time i n fast switching mode q e 2 c p m gain 3 sample time acquisition time i n terface - - real counting mode straight output mode fast switching mode hv reduction mode w/o offset calibration including offset calibration ? peak - continuous data output (under development) width of measurement window for fash sequence measurements usb 2.0 spi (under development) 5.6 - 1e4 5e7 1e9 1e10 - - - - 5000 5000 200 - - vdc ma counts per second 4 counts per second 4 counts per second 4 counts per second 4 ms ms photoelectrons/ photons - ms ms s mbit/second typ 5.3 5 300 - - - - 1 20 20 % a djustable - - - 2 - min 5.0 - 1 1 1 3e5 - - - 1e3 200 1 3 - - 1. see below performance characteristics 2. cpm characteristics can be matched to the applications requirements C see spectral response curve 3. gain pre-set to optimal single photons sensitivity 4. actual output information is rlu (relative light unit) C counts per second is the c calculated value based on rlu 5. recommended for best performance module s and optical r e ceiver s gigahertz photon detection module gigahertz photon detection module 8 www.excelitas.com
block diagram gigahertz photon detection module figure 1 straight o u tput mode graph 1 measurement bandwidth straight output mode at 1 s /s data readout, pulses per second ( c p s) relative intensity of light 1e+11 1e+09 1e+07 1e+05 1e+03 1e+01 1e-01 1e-02 1e+00 1e+02 1e+04 1e+06 1e+08 1e+10 relative intensity of light 1e+11 1e+09 1e+07 1e+05 1e+03 1e+01 1e-01 1e-02 1e+00 1e+02 1e+04 1e+06 1e+08 1e+10 fast switching mode graph 2 measurement bandwidth extended range/ fast switching mode at 1 s /s data readout, pulses per second ( c p s) relative intensity of light 1e+11 1e+09 1e+07 1e+05 1e+03 1e+01 1e-01 1e-02 1e+00 1e+02 1e+04 1e+06 1e+08 1e+10 real c o unting mode graph 4 measurement bandwidth real c o unting mode at 1 s /s data readout, pulses per second ( c p s) relative intensity of light 1e+11 1e+09 1e+07 1e+05 1e+03 1e+01 1e-01 1e-02 1e+00 1e+02 1e+04 1e+06 1e+08 1e+10 high voltage reduction mode graph 3 measurement bandwidth extended range/ hv reduction mode at 1 s /s data readout conv. to pulses per second ( c p s) 9 www.excelitas.com gigahertz photon detection module
10 www.excelitas.com high speed high sensitivity l i n e a r c a m eras fo r m ac hine visi o n applications ? high speed machine vision ? postal / parcel sorting ? web inspection ? surface inspection ? ocr / barcode reading web inspection features and benefts ? high speed, up to 80 mhz data rate. ? 14 m square pixels in 512, 1024, 2048 or 4096 element resolutions. ? small size 101.6 x 57.2 x 38.1 mm ? 8/10/12-bit output format ? high line rates up to 68 khz ? 66 db dynamic range ? high sensitivity pinned photodiode ccd sensor ? cameralink? base output ? user controlled smart pixel correction ? antiblooming control ? single 12 vdc power supply ? electronic exposure control ? adjustable gain levels ? real time status leds ? ultra-low image lag ? square pixels with 100 % fll factor ? extended spectral range C 200 C 1000 nm product description te smartblue? digital linescan cameras incorporate the latest in photodiode array technology based on the industry standard reticon? devices with state of the art electronics and a robust industrial camera housing. te linescan photodiode array is a pinned photodiode charge couple device which allows for high sensitivity, fast readout, while maintaining high dynamic range, and low image lag. te smartblue? cameras are cost efective high-performance digital linescan cameras, and feature a cameralink? digital interface. tese cameras feature geometrically precise photodiode ccd image sensor with 14 um square pixels with resolutions of 512, 1024, 2048 and 4096 pixels. tis next gen- eration array can achieve data rates up to 80 mhz with superior noise immunity, precise linearity, and high cte. te smartblue? digital cameras are designed for high line rate applications with low to moderate light conditions and where small size, and low cost are required. smartblue? linear camera technical specification part number resolution window aperture length m ax . line rate sb0440clg-011 sb0440clq-011 sb1440clg-011 sb1440clq-011 sb2480clg-011 sb2480clq-011 sb4480clg-011 sb4480clq-011 512 512 1024 1024 2048 2048 4096 4096 glass quartz glass quartz glass quartz glass quartz 7.2 mm 7 .2 mm 1 4.4 mm 1 4.4 mm 2 8.7 mm 2 8.7 mm 5 7.3 mm 5 7.3 mm 6 8 kh z 68 kh z 36.4 kh z 36.4 kh z 37.3 kh z 37.3 kh z 19.1 kh z 19.1 kh z smartblue? linear camera mo d ules a n d o p ti c a l receive r s ccd linear cameras C smartblue? linear camera package drawing* technical specification 4.00 [101.6] 2.25 [57.2] * not for sb4480clx spectral sensitivity curve (1x gain) technical specification responsivity (v/mj/cm 2 ) qe (%) wavelength (nm) 250 350 450 550 650 750 850 950 1050 100 90 80 70 60 50 40 30 20 10 0 100 90 80 70 60 50 40 30 20 10 0 qe (right scale) ? ? responsivity (left scale)
11 www.excelitas.com p r oduct d e scription excelitas p-series linear imager combines the best features of high-sensitivity photodiode array de- tection and high speed, charge-coupled scanning to ofer an uncompromising solution to the increas- ing demands of advanced imaging applications. tese high-performance imagers feature low noise, high sensitivity, impressive charge-storage capacity, and lag-free dynamic imaging. te 14 m square contiguous pixels in these imagers reproduce images with minimum information loss and artifact generation, while their unique photodiode structure provides excellent blue response extend- ing below 200 nm in the ultraviolet. tese versatile imagers are available in array lengths of 512 to 4096 elements with either low-cost glass or uv-enhanced fused silica windows. p-series c c d linear array technical specification part n u mber pixel c o unt elements 512 1024 2048 2048 4096 14 x 1 4 14 x 1 4 14 x 1 4 14 x 1 4 14 x 1 4 1 1 1 2 2 200 C 1000 200 C 1000 200 C 1000 200 C 1000 200 C 1000 4 0 40 40 80 80 rl0512p rl1024p rl2048p hl2048p hl4096p pixel size m n u mber of outputs spectral response range nm pixel data rate mhz 2500 : 1 2 500 : 1 2 500 : 1 2 500 : 1 2 500 : 1 dynamic range 2 ? @ 5 v 2 ? @ 5 v 2 ? @ 5 v 2 ? @ 5 v 2 ? @ 5 v horizontal c l ocking typ. high speed high se n s itivit y li n e s c a n imagers f o r m a c h i n e visio n module s and optical r e ceiver s p-series ccd linear array cc d linear imagers quantum e f fciency technical specification responsivity (v/mj/cm 2 ) qe (%) wavelength (nm) 250 350 450 550 650 750 850 950 1050 100 90 80 70 60 50 40 30 20 10 0 100 90 80 70 60 50 40 30 20 10 0 qe (right scale) ? ? responsivity (left scale) a pplications ? web inspection ? mail sorting ? production measurement ? position sensing ? spectroscopy ? high speed document reading f eatures and benefts ? 2500:1 dynamic range ? ultra-low image lag ? electronic exposure control ? antiblooming control ? square pixels with 100 % fll factor ? extended spectral range C 200 C 1000 nm
12 www.excelitas.com high se n s itivit y l a rge format pixels f o r spe c t r o sc o p y technical specification a pplications ? spectroscopy ? colorimetry f eatures and benefts ? 2.5 mm photodiode aperture ? extremely low dark leakage current ? low power dissipation ? clock-controlled sequential readout at rates up to 1 mhz ? single-supply operation with hcmos-compatible inputs ? single shift register design ? wide dynamic range ? differential video output for clock noise cancellation ? high saturation charge 10 pc (25 m) or 20 pc (50 m) ? antiblooming function for low crosstalk ? line reset mode for simultaneous reset of all photodiodes ? wide spectral response: 300 to 1000 nm ? polished fused silica window ? two on-chip diodes for temperature monitoring p r oduct d e scription excelitas l-series cmos linear photodiode arrays ofer a high-quality, low-cost solution for spec- troscopy and colorimetry applications in the 300C1000 nm range. te l-series familys combination of high sensitivity, low dark current, low switching noise and high saturation charge provides excel- lent dynamic range and great fexibility in seting integration time. l-series sensors consist of a linear array of silicon photodiodes, each connected to a mos switch for readout controlled by an integrated shif register scanning circuit. under external clock control, the shif register sequentially enables each of the switches, directing the charge on the associated photodiode to an output line. a dummy output provides clock noise cancellation. l-series devices are mounted in ceramic side-brazed, 22-pin, dual- inline packages with ground and polished fused silica windows and are pin-compatible with earlier excelitas sb and tb-series sensors. l-series models are available with pixel spacings of 25 m and 50 m and lengths from 128 to 1024 pixels. all models feature a 2500 m pixel aperture to simplify alignment in spectroscopic instruments. p-series c c d linear array pixel pitch 25 m pixels pixel pitch 50 m rl1201lgq-711 rl1202lgq-711 rl1205lgq-711 rl1210lgq-711 rl1501lfq-711 rl1502lfq-711 rl1505lfq-711 C 128 256 512 1024 p-series c c d linear array technical specification @ 5 v bias pf part n u mber @ 2.5 v bias pf video c a pacitance sensitivity c / j/cm 2 C C C C 9.1 14 25 6.7 10.2 15.4 28.7 C C C 2 x 1 0 -4 2 x 1 0 -4 2 x 1 0 -4 2 x 1 0 -4 4 x 1 0 -4 4 x 1 0 -4 4 x 1 0 -4 50 50 50 50 50 50 50 10 10 10 10 20 20 20 70.000 70.000 70.000 70.000 100.000 100.000 100.000 0.2 0.2 0.2 0.2 0.4 0.4 0.4 rl1201 rl1202 rl1205 rl1210 rl1501 rl1502 rl1505 saturation exposure nj/cm 2 saturation c h arge p c d ynamic range dark c u rrent typ. pa operating temperature: 0?c min. to +55?c max. storage temperature: -25?c min. to +85?c max. lag: <1 % saturation voltage: 600 mv l-series cmos linear photodiode array module s and optical r e ceiver s quantum e f fciency technical specification qe (%) wavelength (nm) 80 70 60 50 40 30 20 10 0 250 350 450 550 650 750 850 950 1050 c mos linear photodiode arrays C l-series
13 www.excelitas.com a pplications ? laser range fnder ? confocal microscopy ? video scanning imager ? high speed analytical instrumentation ? free space communication ? uv light sensing ? distributed temperature sensing f eatures and benefts ? ultra low noise ? high speed ? high transimpedance gain p r oduct d e scription tese modules comprise of a photodetector (pin or apd) and a transimpedance amplifer in the same hermetically sealed package. having both amplifer and photodetector in the same package allows low noise pickup from the surrounding environment and reduces parasitic capacitances from interconnect allowing lower noise operation. te hybrid amplifer c30659 series includes an apd connected to a low noise transimpedance amplifer. 4 models are ofered with silicon apd and 2 models with ingaas apd. standard band- width of 50 mhz and 200 mhz can accommodate a wide range of applications. two c30659 models are ofered with the apd mounted on a termo-electric cooler (the llam se ries) to help improving noise or to keep the apd at constant temperature regardless of the ambient temperature. te c30659 can be customized to meet application specifc requirements by using one of the excelitas rear entry apds, by choosing a custom bandwidth or by qualifying it to your environmental conditions. pigtailed versions are also available in a 14 pins dil package allowing nearly 100 % coupling efciency. te c30950eh ofers a low cost alternative to the c30659. te amplifer is de signed to neutralize the input capacitance of a unity voltage gain amplifer. te c30919e uses the same architecture of the c30950eh with the addition of a high voltage temperature compensation circuit which maintain module responsivity constant over a wide temperature range. two huv modules are ofered with a pin detector for low frequency high gain application, covering a broad spectrum range from the uv to the near ir. all optical receiver products can be qualifed to meet the most demanding environmental specifcation as described in mil-prf-38534. pi n a n d apd r e c e iver m o d u l es f o r an a l y t i c a l a n d in d u s trial a p pli c a tio n s u n it c30902 c30817 c30954 c30956 c30645 c30645 c30817 c30817 c30662 c30954 uv-100 uv-215 detector c 3 0659-900-r5bh c 3 0659-900-r8ah c 3 0659-1060-r8bh c 3 0659-1060-3ah c 3 0659-1550-r08bh c 3 0659-1550-r2ah c 3 0919 e c 3 0950 e h l lam-1550-r2ah llam-1060-r8bh huv-1100bgh huv-2000bh mm 2 0.5 0.8 0.8 3 80 m 200 m 0.8 0.8 0.2 0.8 2.5 5.4 active diameter mhz 200 50 200 50 200 50 40 50 50 200 1 k hz 1 k hz bandwidth kv/w 460 2700 - - - - - 520 - - - - responsivity, 830 n m kv/w 400 3000 370 450 90 @ 1 550 n m 340 @ 1 550 n m 1000 560 340 @ 1 550 n m 370 130 m v/w 130 m v/w responsivity, 900 n m kv/w - - 200 280 - - 250 140 - 200 - - responsivity, 1060 n m fw / hz 35 14 55 55 220 130 20 27 130 55 30 70 n e p to-8 to-8 to-8 to-8 to-8 to-8 to, 1 i n to-8 to-8 fange to-8 fange custom custom package v 0.9 0.9 0.9 0.9 0.9 0.9 0.7 0.7 0.9 0.9 5 m in 5 m in output voltage swing, 50 o hm si p i n and apd modules C i n gaas apd modules product table module s and optical r e ceiver s si pin and apd modules, ingaas apd modules si pi n and apd modules C ingaas apd modules
14 www.excelitas.com p r oduct d e scription tese photodiode arrays are used to generate an x-ray image by scanning an object line by line. te x-rays are converted into light through the atached scintillator crystal. te light intensity is then measured by the photodiodes. te boards are employing chip-on-board technology with optically adapted scintillator crystals. te listed designs can be ordered as a standard part, but can also be cus- tomized to meet the needs of a wide variety of applications. excelitas custom photodiode arrays give customers the option to choose the: ? active photodiode area ? total number of elements ? overall pcb and photodiode chip dimensions ? photodiode chip geometry and orientation ? electro-optical specifcations ? single sided vs. double sided pcb ? alternative substrate materials (e.g. ceramic) ? electrical interface (e.g. connector) first stage amplifcation electronics can also be added to the custom board design to convert the current generated by the photodiode into an easy to measure voltage. photodiode arrays ? vta series product table symbol u n it material dimensions design design max i d i d mm mm mm % mm 2 pa pa substrate active area photodiode c h ip dimensions dark c u rrent @ h = 0 , vr = 1 0 m v &2 &2 &2 &2 &2 &2 &2 &2 x x x x x x x x x x x x x x dualcell x dualcell x dualcell pitch ? v t a2 164h- d- nc - 00- 0 v t a 1616h- h- s c - 01- 0 v t a 1616h- l- s c - 02- 0 v t a25 16h- h- s c - 01- 0 v t a25 16h- l- s c - 02- 0 v t a 1216h- h- nc - 00-0 v t a 1216h- l- nc - 00-0 v t a0832h-h- nc - 00-0 n u mber of elements 32 scintillator c r ystal type #ustom #s) /3 #s) /3 #ustom #ustom #ustom light c u rrent u n iformity @ 540 n m, 30 n w/cm 2 typ max c j c j pf min s r a/w pf junction c a pacitance @ h = 0 , vr = 0 v r adiometric sensitivity @ 540 n m ? p h otodiode a r ray s for x-ray security scanning lef: 16 element, 1.6 mm pitch photodiode array with segmented csi scintillator. right: 16 element, 2.5 mm pitch photodiode array with gos low energy screen scintillator. %lectricalcharacteristicsat4 ambient ?# photodiode arrays C vta series a pplications ? luggagescanning ? cargo&containerscanning ? foodinspection ? non-destructivetesting f eatures and benefts ? variouscrystaltypesavailable(csi,gos,etc.) ? custochipgeoetry&pitch ? singleordual-sidedasseblies ? highresponsivityandlocapacitance ? onboard electronicsavailableonacustobasis ? multiplephotodioderos typ
15 www.excelitas.com side 1 detail v t a 2164h-d figure 1 pin o u t v t a 2164h-d side 2 detail v t a 2164h-d figure 2 pos. of t o p diodes rel. to bottom diodes v t a 2164h-d figure 4 c h ip spacing details, side 1 ( t y p) v t a 2164h-d figure 3 pin c o nnector j1 ( t o p diodes) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 c o nnection d1 d2 d3 d4 d5 d6 d7 d8 d9 d10 d11 d12 d13 d14 d15 d16 d17 d18 d19 d20 d21 d22 d23 d24 d25 d26 d27 d28 d29 d30 d31 d32 n / c c ommon pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 c o nnection d1 d2 d3 d4 d5 d6 d7 d8 d9 d10 d11 d12 d13 d14 d15 d16 d17 d18 d19 d20 d21 d22 d23 d24 d25 d26 d27 d28 d29 d30 d31 d32 n / c c ommon c o nnector j2 (bottom diodes) (optical c e nter line to optical c e nter line) photosensitive area 0.0545 x 0.0385 (typ.) or 0.0021 sq. i n . d32 d1 ? photodiode arrays C vta series
16 www.excelitas.com a pplications ? laser range fnder ? scanning video imager ? confocal microscope ? free space communication ? spectrophotometers ? fluorescence detection ? luminometer ? dna sequencer ? particle sizing f eatures and benefts ? low noise ? high gain ? high quantum effciency ? built-in te-cooler option ? various optical input options p r oduct d e scription tese rear entry reach-through silicon apds ofer the best compromise in terms of cost and per- formance for applications requiring high speed and low noise photon detection from 400 n m up to 1100 n m. tey feature low noise, high quantum efciency and high gain while maintaining reasonably low operating voltage. te active area varies from 0.5 m m to 3 m m to accommodate a large variety of applications. te s series of the c30902 family of apds can be used in either their normal linear mode (v r < v br ) or as photon counter in the geiger mode (v r > v br ). tis series is particularly well- suited for ultra-sensitive photon measurements in biomedical and analytical instruments. precise temperature control can be achieved with a thermo electric cooler which can be used to improve noise and responsivity or to maintain constant responsivity over a wide range of ambient temperature. high quantum efciency can be achieved from 1100 n m to 1700 n m with our ingaas avalanche pho- todiodes. tey were designed to maintain high gain, high quantum efciency and high bandwidth even with their large area of up to 200 m. te short distance between to window and the active area allows easy interface with optical system. u n it mm 0.8 3 0.8 0.5 0.5 0.5 0.5 0.5 1.5 0.25 0.25 0.8 1.5 3 active diameter c 3 0817 e h c 3 0872 e h c 3 0884 e c 3 0902bh c 3 0902bf c h c 3 0902bs t h c 3 0902 e h c 3 0902sh c 3 0916 e h c 3 0921 e h c 3 0921sh c 3 0954 e h c 3 0955 e h c 3 0956 e h pf 2 10 4 1.6 1.6 1.6 1.6 1.6 3 1.6 1.6 2 3 10 c apaci- tance ns 2 2 1 0.5 0.5 0.5 0.5 0.5 3 0.5 0.5 2 2 2 rise/fall time na 50 100 100 15 15 15 15 15 100 15 15 50 100 100 dark c u rrent v 300 325 190 185 185 185 185 185 315 185 185 300 315 325 breakdown voltage min v 475 500 290 265 265 265 265 265 490 265 265 475 490 500 breakdown voltage max v/ c 2.2 2.2 1.1 0.7 0.7 0.7 0.7 0.7 2.2 0.7 0.7 2.4 2.4 2.4 tempera- ture c oeffcient 120 60 100 150 150 150 150 250 80 150 250 120 100 75 typical gain a/w 77 77 77 77 128 77 128 responsivity 830 nm a/w 75 37 63 60 60 60 60 108 50 60 108 75 70 45 responsivity 900 nm a/w 9 8 12 36 34 25 responsivity 1060 nm fw / hz) 1 30 13 3 3 3 3 0.9 20 3 0.9 13 14 25 n e p to-5 to-8 to-5 ball lens to-18 fc receptale st receptale to-18, fat window to-18, fat window to-5 to-18, fat window to-18, light pipe to-5 to-5 to-8 package avalanche photodiodes C silicon apds technical specification a v ala n c h e p h otodiodes for in d u s trial & a n a l y t i c a l a p pli c a tio n s avalanche photodiodes C silicon and ingaas apds avalanche photodiodes silicon and ingaas apds p h otodiode s for h i gh- p e rfor m a nce a p plication s
17 www.excelitas.com u n it mm 0.5 0.5 0.8 0.8 1.5 1.5 3 active diameter c 3 0902sh- t c c 3 0902sh-d t c c 3 0954 e - t c c 3 0954 e - d t c c 3 0955 e - t c c 3 0955 e - d t c c 3 0956 e - t c mm 2 0.2 0.2 0.5 0.5 1.8 1.8 7 active area pf 1.6 1.6 2 2 3 3 10 total c apaci- tance ns 0.5 0.5 2 2 2 2 2 rise/fall time na 2 1 50 50 100 100 100 dark c urrent v 225 225 300 300 315 315 325 breakdown voltage min v - - 475 475 490 490 500 breakdown voltage max 0.7 0.7 2.4 2.4 2.4 2.4 2.4 tempera- ture c oeffcient 250 250 120 120 100 100 75 typical gain a/w 128 128 - - - - - respon- sivity 830 nm a/w 108 108 75 75 70 70 45 respon- sivity 900 nm a/w - - - - - - - respon- sivity 1060 nm pa/sqrt(hz) 0.04 0.02 0.2 0.04 0.2 0.05 0.2 n oise c urrent to-8 fange to-8 fange to-8 fange to-8 fange to-8 fange to-8 fange to-8 fange package silicon apd C t e - c o oled product table tc stands for single stage cooler, operating temperature 0 c dtc stands for double stage cooler, operating temperature -20 c package drawing C t o - 8 flange figure 1 t y pical t o - 5 package* figure 2 t y pical t o - 8 package* figure 3 c e ramic c a rrier figure 4 t y pical t o - 18 package* figure 5 t y pical spectral responsivity @ 22o c graph 1 responsivity (a/w) wavelength (nm) 1000 100 10 1 400 500 600 700 800 900 1000 1100 CC c 3 0902eh, c 3 0921eh CC c 3 0902sh, c 3 0921sh avalanche photodiodes C silicon and ingaas apds *note: package dimension for indication only. exact package dimension can be found on products datasheets. u n it m 200 200 80 80 50 50 active diameter c 3 0662 e h c 3 0662 e ce r h c 3 0645 e h c 3 0645 e ce r h c 3 0644 e h c 3 0644 e ce r h pf 2.5 2.5 1.25 1.25 0.6 0.6 c apacitance 800 800 1000 1000 2000 2000 b w 70 70 35 35 25 25 dark c u rrent v 40 40 40 40 40 40 breakdown voltage min v 90 90 90 90 90 90 breakdown voltage max v/ c 0.14 0.14 0.14 0.14 0.14 0.14 temperature c oeffcient 10 10 10 10 10 10 typical gain a/w 9.3 9.3 9.3 9.3 9.3 9.3 responsivity 1550 nm fw/sqrt(hz) 100 100 25 25 15 15 n ep to-18 ceramic carrier to-18 ceramic carrier to-18 ceramic carrier package i n gaas apd product table mhz na
18 www.excelitas.com p r oduct d e scription c30927 series of quadrant si avalanche photodiode and the c30985e multi-element apd array utilize the double-difused reach-through structure. tis structure provides ultra high sensitivity at 400-1000 nm. te c30927 quadrant structure has a common avalanche junction, with sepa ration of the quadrants achieved by segmentation of the light entry p+ surface opposite the junction. with this design, there is no dead space between the elements and therefore no loss of response at boresight. te c30927eh-01, -02 and -03 are optimized for use at wavelengths of 1060, 900, and 800 nm re - spectively. each device type will provide high responsivity and excellent performance when operated within about 50 nm of the specifed wavelength. te c30985e is a 25 element monolithic linear apd array having a high inte r-electrode resistance with a 75 m dead space between the elements. packages have a common gro und and bias with a separate lead for each element output. a v ala n c h e p h otodiodes for a n a l y t i c a l a p pli c a tio n s avalanche photodiodes C si apd arrays product table part n u mber u n it n u mber of elements c 3 0927 e h -01 c 3 0927 e h -02 c 3 0927 e h -03 c 3 0985 e mm 4 4 4 25 photo sensitive diameter mm 1.5 1.5 1.5 0.3 responsivity a/w 15(@ 1 060 n m) 62(@ 9 00 n m) 55(@ 8 00 n m) 31(@ 9 00 n m) dark c u rrent per element na 25 25 25 1 spectral n o ise c u rrent pa/hz 0.5 0.5 0.5 0.1 c a pacitance @ 1 00 k hz pf 1 1 1 0.5 response time ns 3 3 3 2 n e p fw / hz) 33(@ 1 060 n m) 16(@ 9 00 n m) 9(@ 8 00 n m) 3(@ 9 00 n m) n e p v 275 - 4 25 275 - 4 25 275 - 4 25 250 - 4 25 avalanche photodiodes si apd arrays p h otodiode s for h i gh- p e rfor m a nce a p plication s package drawing C c 3 0985 e figure 2 15.24 (0.600) 15.24 (0.600) package drawing C c 3 0927 series figure 1 avalanche photodiodes C si apd arrays a pplications ? spectroscopy ? particle detection ? spot tracking and alignment systems ? adaptive optics ? lidar (light detection and ranging) f eatures and benefts ? high quantum effciency ? hermetically sealed packages ? monolithic chip with minimal dead space between elements ? specifc tailored wavelength response ? rohs compliant
19 www.excelitas.com p r oduct d e scription te c30954eh, c30955eh, and c30956eh are general purpose silicon avalanche photodiodes made using a double-difused reach-through structure. te design of these photodiodes are such that their long wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties. tese apds have quantum efciency of up to 40 % at 1060 nm. at the same time, the diodes retain the low noise, low capacitance, and fast rise and fall times characteristics. t o help simplify many design needs, these apds are also available in excelitas high-performance hybrid preamplifer module type c30659 series, as well as the preamplifer and te cooler incorporated module type llam series. please refer to the respective sections in this catalog. a v ala n c h e p h otodiodes for a n a l y t i c a l a p pli c a tio n s avalanche photodiodes 1060 nm nir enhanced si apds p h otodiode s for h i gh- p e rfor m a nce a p plication s package drawing C c 3 0954 e h , c 3 0955 e h figure 1 package drawing C c 3 0956 e h figure 2 spectral responsivity c h aracteristics graph 1 wavelength (nm) 100 10 1 300 400 600 800 1000 1200 1400 CC c 3 0954 e h CC c30955eh CC c 3 0956 e h 1060 nm n ir enhanced si apds a pplications ? range fnding ? lidar (light detection and ranging) ? yag laser detection f eatures and benefts ? high quantum effciency at 1060 nm ? fast response time ? wide operating temperature range ? low capacitance ? hermetically sealed packages ? rohs compliant si apds C n i r e n hanced product table part n u mber u n it mm photo sensitive diameter 0.8 1.5 3.0 c 3 0954 e h c 3 0955 e h c 3 0956 e h a/w respon- sivity @ 1 060 n m 36 34 25 na dark c u rrent 50 100 100 pa/hz spectral n o ise c u rrent 0.5 0.5 0.5 pf c a pacitance @ 1 00 k hz 2 3 10 ns response time 2 2 2 fw / hz) n e p @ 1 060 n m 14 15 20 vop range 275 - 4 25 275 - 4 25 275 - 4 25 v
20 www.excelitas.com a v ala n c h e p h otodiodes for high e n e rg y radiatio n dete c t io n s appli c a tio n s , mole c u l ar imagi n g large area si-apds C uv-enhanced apds p h otodiode s for h i gh- p e rfor m a nce a p plication s quantum e f fciency vs. wavelength graph 1 quantum effciency (%) wavelength (nm) 100 80 60 40 20 0 340 380 420 460 500 600 700 800 900 1000 1100 CC c 3 0700-100 CC c 3 0700-200 CC c 3 0626 quantum e f fciency vs. wavelength graph 2 quantum effciency (%) wavelength (nm) 90 70 60 50 40 30 350 400 450 500 550 600 650 700 750 CC c 3 0739 series large area si-apds C u v-enhanced apds a pplications ? nuclear medicine ? fluorescence detection ? high energy physics ? medical imaging ? radiation detection ? particle physics ? instrumentation ? environmental monitoring f eatures and benefts ? high quantum effciency ? low dark currents ? easy coupling to scintillator crystals ? immunity to electromagnetic felds ? short wavelength enhanced responsivity ? custom packaging available ? excellent timing resolution ? rohs compliant p r oduct d e scription te c30739ecerh silicon avalanche photodiode (apd) is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 to over 700 nano- meters. it has low noise, low capacitance and high gain. it is designed to have an enhanced short wave- length sensitivity, with quantum efciency of 60 % at 430 n m. te standard ceramic carrier package allows for easy handling and coupling to scintillating crystals such as lso and bgo. combined with the superior short wavelength responsivity, it makes this apd ideal in demanding applications such as positron emission tomography (pet). te c30626fh and c30703fh series are large area si apds in fat pack packages for either direct detection or easy coupling to scintillator crystals. te c30626 uses a standard reach through structure and has peak detection at about 900 nm. te c30703 is enhanced for blue wavelength response and has peak quantum efciency at ~ 530 nm. tese apds are packaged in square fat pack with or without windows or on ceramics. te no-window devices can detect direct radiation of x-rays and electrons at the energies listed, and the windowed packages are best for easy scintillator coupling. large area si-apds C uv- e n hanced apds product table part n u mber u n it mm photo sensitive diameter 5 x 5 10 x 10 5 .6 x 5 .6 c 3 0626fh c 3 0703fh c 30739 ece rh a/w responsivity 22 (@900 n m) 16 (@530 n m) 20 (@430 n m) na dark c u rrent 250 10 50 spectral n o ise c u rrent 0.5 0.7 1.4 c a pacitance @ 1 00 k hz 30 120 60 ns response time 5 5 2 fw/hz) n e p 23 (@900 n m) 40 (@530 n m) - v vop range 275 - 4 25 275 - 4 25 275 - 4 25 pa/ hz pf
21 www.excelitas.com p r oduct d e scription te excelitas c30737 series silicon apds provide high responsivity between 500 n m and 1000 n m, as well as extremely fast rise times at all wavelengths with a frequency response above 1 g hz. te c30724 as a low gain apd can be operated at fxed voltage without the need of a temperature compensation. standard versions are available in two active area sizes: 0.23 and 0.5 m m diameter. tey are ofered in the traditional hermetic to housing (e), in cost efective plastic through-hole t-1? (to-like, p) packages, and in leadless ceramic carrier (lcc, l) package for surface mount technology. all listed varieties are ideally suited for high-volume, low cost applications. customization of these apds is ofered to meet your design challenges. operation voltage selection and binning or specifc wavelength fltering options are among many of the application specifc solutions available. a v ala n c h e p h o t o d i o d e s for r a n g e f i n d i n g a p pli c a tio n s c 3 0737 e p itaxial silicon apd C c 3 0724 low gain apd product table part n u mber u n it package c 3 0737 e h -230-80 c 3 0737ph-230-80 c 3 0737lh-230-80 c 3 0737lh-230-81 c 3 0737 e h -500-80 c 3 0737ph-500-80 c 3 0737lh-500-80 c 3 0737lh-500-81 c 3 0737 e h -230-90 c 3 0737ph-230-90 c 3 0737ph-230-90 c 3 0737ph-230-92 c 3 0737 e h -500-90 c 3 0737ph-500-90 c 3 0737lh-500-90 c 3 0737lh-500-92 c 3 0724 e h c 3 0724ph to t-1? lcc lcc to t-1? lcc lcc to t-1? lcc lcc to t-1? lcc lcc to t-1? optical bandpass filter nm - - - 635 - - - 635 - - - 905 - - - 905 - - design active area diam. m 230 230 230 230 500 500 500 500 230 230 230 230 500 500 500 500 500 500 design peak sensitivity wavelength nm 800 800 800 635 800 800 800 800 900 900 900 905 900 900 900 905 920 920 peak typ breakdown voltage v 120 120 120 120 120 120 120 120 180 180 180 180 180 180 180 180 - - v br min v 200 200 200 200 200 200 200 200 260 260 260 260 260 260 260 260 350 350 v br max total dark c u rrent (bulk + surface) na 2.5 2.5 2.5 2.5 5 5 5 5 2.5 2.5 2.5 2.5 5 5 5 5 20 20 10 10 10 10 20 20 20 20 10 10 10 10 20 20 20 20 40 40 i d typ na i d max n o ise c u rrent, (f?=?10?khz, f=1 h z) pa / hz 0.1 0.1 0.1 0.1 0.3 0.3 0.3 0.3 0.2 0.2 0.2 0.2 0.4 0.4 0.4 0.4 0.1 0.1 c a pacitance pf 1.0 1.0 1.0 1.0 2.0 2.0 2.0 2.0 0.6 0.6 0.6 0.6 1.0 1.0 1.0 1.0 1.0 1.0 c d typ rise & fall time, (rl?=?50?? , 10 % - 90 % -1 0 % points) ns 0.22 0.22 0.22 0.22 0.30 0.30 0.30 0.30 0.50 0.50 0.50 0.50 0.60 0.60 0.60 0.60 5 5 typ temp. c o eff. of v op , for c o nstant m v / ? c 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 - - typ gain@ peak 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 15 15 m typ responsivity @ peak 50 50 50 35 50 50 50 35 60 60 60 60 60 60 60 60 8.5 8.5 m typ electrical characteristics at t ambient = 22 c; at operating voltage, v op right: to-c30737ph series t-1? (to-like) trough-hole package (4.9 mm diameter) lef: c30737lh series leadless ceramic carrier package (3 x 3 mm 2 ) p h otodiode s for h i gh- p e rfor m a nce a p plication s c 3 0737 high speed, low voltage apd C c 3 0724 low temperature c o effcient apd a pplications ? laser range fnding for 600 to 950 nm range ? optical communication ? analytical instrumentation f eatures and benefts ? optimized versions for 900 and 800 nm peak sensitivity ? standard versions with 500 and 230 m active diameter ? various package types: hermetic to, plastic to, smd ? high gain at low bias voltage ? low breakdown voltage ? fast response, t r ~ 300 ps ? low noise, in ~ 0.2 pa /hz ? rohs compliant
22 www.excelitas.com p r oduct d e scription silicon pin photodiodes are available in a wide variety of active area to accommodate a large variety of applications. te pin structure allows high quantum efciency and fast response for detection of photon in the 400 nm to 1100 nm range. te yag series ofers an exceptional 0.4 a/w at 1060 nm by using a thick silicon material. designed with a guard ring to collect current generated outside of the active area, they ar e the detectors of choice when the entire chip is illuminated by reducing unwanted carriers responsible for noise. precise beam positioning can be achieved by using our quadrant detectors. tey are designed with 4 pie-shaped quadrant sections from doping process thus reducing to almost zero the dead space between each quadrant. each quadrant is connected to an isolated lead. te c30741 provide fast response and good quantum efciency in the spectral range between 300 nm to 1100 nm. designed for high-speed, high-volume production and cost sensitive applica - tions, these photodiodes are ofered in plastic package, either to style or smd packages with a visible blocking flter option. our uv series are high quality si pin photodiode in hermetically sealed to package designed for the 220 n m to 1100 n m wavelength region with enhanced operation in the uv range. low noise detection is achieved by operating the uv series in photovoltaic mode (0 v bias). te ingaas pin detectors provide high quantum efciency from 800 nm to 1700 nm. tey feature low c apacitance for extended bandwidth, high resistance for high sensitivity, high linearity, and unifor- mity within 2 % across the detector active area. pi n p h oto diodes f o r i n d u s trial a p pli c a tio n s u n it m 50 100 100 100 100 100 350 350 350 75 active diameter c 3 0616 e ce r h c 3 0617bh c 3 0617bf c h c 3 0617bs c h c 3 0617bs t h c 3 0617 e ce r h c 3 0618bf c h c 3 0618gh c 3 0618 e ce r h c 3 0637 e ce r h a/w 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.95 responsivity peak pf 0.35 0.8 0.8 0.8 0.8 0.6 4 4 4 0.4 c apacitance ghz 3.5 3.5 3.5 3.5 3.5 3.5 0.75 0.75 0.75 3.5 b w na <1 <1 <1 <1 <1 <1 1 1 1 <1 dark c u rrent v 100 100 100 100 100 100 100 100 100 100 breakdown voltage v 5 5 5 5 5 5 5 5 5 5 operating voltage ceramic carrier to-18, ball lens to-18, fc receptacle to-18, sc receptacle to-18 st receptacle ceramic carrier to-18, fc receptacle t0-18 ceramic carrier ceramic carrier package i n gaas p i n , high speed, peak wavelength at 1550 n m product table p h otodiode s for h i gh- p e rfor m a nce a p plication s pin photodiodes ingaas and si pin diodes, quadrant detectors, uv-enhanced ingaas and si pi n diodes C quadrant detectors C u v -enhanced - a pplications ? telecom ? instrumentation ? photometry ? laser power monitoring ? fiber optic test equipment ? high speed switching ? spot tracking ? laser range fnders ? missile guidance ? laser warning system f eatures and benefts ? high speed ? high responsivity ? hermetically sealed ? large area available ? high shunt resistance, low dark current
23 www.excelitas.com um 1.5 x 1 .5 1.5 x 1 .5 1 2.5 5 8 11 0.5 2.5 5.0 2.5 1.0 2.5 0.0 5.5 5 5 2.5 5.0 16.0 active diameter mm 2 2.25 2.25 0.8 5 20 50 100 0.2 5.1 20 5.1 0.81 5.1 23.4 18.5 18.5 5.1 20 200 0.65 0.65 0.56 x 0 .56 6.71 0.31 active area a/w 0.47 0.47 0.6 0.6 0.6 0.6 0.6 0.5 0.6 0.6 0.64 0.62 0.62 0.62 0.62 0.62 0.7 0.7 0.7 0.6 0.5 responsiv- ity peak nm 800 800 900 900 900 900 900 830 850 850 920 900 900 900 900 900 1000 1000 1000 900 900 880 880 peak wavelength pf 11 11 2.5 6 17 35 70 1.6 8.5 30 8.5 25 150 700 630 630 2.5 6 35 10 10 4 4 25 2.5 c apacitance ns 2 2 5 8 10 15 20 0.5 3.5 5 <1n - - - - - - 5 5 5 10 10 150 150 200 3000 rise/fall time na 0.05 0.05 10 30 50 70 300 10 5 10 10 - - - - - - <20 <100 <200 10 10 10 10 5 0.5 dark c u rrent m - - - - - - - - - - >500 >100 >50 >75 >75 - - - shunt resistance v 300 300 >100 >100 >100 >100 >100 >200 >125 >125 150 - - - - - - >200 >200 >200 170 170 170 170 170 50 breakdown voltage v 10 10 45 45 45 45 45 100 15 15 100 0 0 0 0 0 0 180 180 180 operating voltage plastic t-1? through-hole t-1? visible blocking to-18 to-5 to-8 to-8 to-36 to-18 to-5 3 pin, 0.6 i nch dia. to-5 to-5, response down to 200 n m to-5, response down to 200 n m to-5, response down to 250 n m to-5, response down to 200 n m to-5, response down to 250 n m to-5, response down to 200 n m to-5 to-8 to-36 smt smt smt smt smt package u n it c 30741ph-15s c 30741pfh-15s c 3 0807 e h c 3 0808 e h c 3 0822 e h c 3 0809 e h c 3 0810 e h c 3 0971 e h f fd-100h ffd-200h f n d -100qh uv-040bqh uv-100bqh uv-215bgh/340 uv-215bqh uv-245bgh uv-245bqh yag-100ah yag-200h yag-444ah sr10bp sr10bp-b sr10d e s r10d e - b pfd10 c r 50d e silicon p i n product table u n it mm 1 1 1 2 3 5 0.5 active diameter c 3 0641 e h - t c c 3 0641 e h -d t c c 3 0641gh c 3 0642gh c 3 0665gh c 3 0723gh c 3 0619gh a/w 0.95 0.95 0.95 0.95 0.95 0.95 0.95 responsivity peak pf 40 40 40 150 200 950 8 c apacitance mega ohm 50 50 50 25 10 5 250 shunt resistance mhz 75 75 75 20 3 3 350 b w na 5 5 5 10 25 - 1 dark c u rrent v 80 80 80 50 50 50 80 breakdown voltage v 0-5 0-5 0-5 0-5 0-5 0-5 0-10 operating voltage to-8, fange, te-cooled to-8, fange, dual te to-18 to-5 to-5 to-5 to-18 package i n gaas p i n , large area, peak wavelength at 1550 n m product table u n it c 3 0845 e h y ag-444-4ah d t c - 140h quadrant pin quadrant pin dual wavelength detector si-si (top/bottom) description mm 8 11.3 3.5 active diameter 50 100 9.9 mm 2 active area 8/q 9/q 300/300 pf c apacitance 6 8 - ns rise/fall time 70 na <75 na 50 / 50 m na dark c u rrent 100 200 - v breakdown voltage min 0.6 0.6 0.6/0 a/w responsivity 900 nm 0.17 0.5 0.25 / 0.15 a/w responsivity 1060 nm 0.26/q 0.2/q 0.033 / 0.133 pa/sqrt(hz) n oise c urrent to-8 custom custom package specialty silicon detectors product table ingaas and si pin diodes C quadrant detectors C uv-enhanced
24 www.excelitas.com p r oduct d e scription an electro-optical smoke detector consists of an infrared led (ired) and photodiode (pd) as- sembly, which exhibits a signal under the presence of smoke in the detection volume (smoke cham- ber). signal range under smoke and clean-air conditions and their long term stability are key features of a smoke detector module. excelitas ofers ired and pd components as well as customized as- semblies with specifed signal level range. such an assembly can be an optical block containing an ired and pd for (smd) board soldering or the complete smoke chamber, which are produced in high-volumes. please contact excelitas to discuss your requirements. selected photodiodes used in smoke detection applications product table symbol u n it mm package active area short c i rcuit c u rrent dark c u rrent junction c a pacitance radiometric sensitivity @ p spectral range peak wavelength n o ise equivalent power lensed sidelooker irt lensed sidelooker flat sidelooker irt lensed ceramic 5.27 7.45 7.45 11 v t p 7840h v t p 413h v t p 100h v t p 1188sh min i s c a 50 120 (typ) 35 200 (typ) max i o na 20 30 30 30 typ c j nf 40 50 50 300 typ s r a/w 0.55 0.55 0.5 0.55 r a n g e nm 725-1150 400-1150 725-1150 400-1100 p nm 925 925 925 925 typ nep w/hz 5.3 x 10-14 2.3 x 10-14 2.5 x 10-14 - selected i n frared l e d s ( i r e d s) used in smoke detection applications product table u n it typ p o package total power test c u rrent forward drop voltage half power beam angle t-1? lensed t-1? lensed t-1? lensed 20 25 20 v t e 1 291-1h v t e 1 291-2h v t e 1 295 typ i ft ma (pulsed) 100 100 100 @ i ft v f v 1.5 1.5 1.5 typ 1/2 degree 12 12 8 optoele c t ro n i c compo n e n t s for s moke d e te c t or a p pli c a tio n s p h otodiode s & - t r an s i s t or s for high-volu m e a p plication s photodiodes and ireds selected photodiodes and infrared emitting diodes (ireds) a pplications ? electro-optical smoke detection f eatures and benefts ? high quality components: photodiodes, ireds (ul- listed) ? binning for optimized transfer function ? customized optical block (pd+ired) assemblies ? smoke chamber assemblies according specifed transfer function symbol
25 www.excelitas.com p r oduct d e scription ambient light sensors from excelitas provide an easy solution for applications that require a response similar to the human eye, making it ideal when the response should only be infuenced by visible light. tese devices contribute in various applications to energy conservation in both fxed and portable devices. tere are three main devices types, one being fltered photodiodes, the second fltered phototransistors and fnally wavelength selective devices based on iii-v material. tey are available in a number of standard packages, including surface mount for automated assembly. spectrally adapted photodiodes and phototransistors product table electrical characteristics at t ambient = 25 c s ymbol u n it s r typ mm 2 package active area t-1? fat t-1? fat t-1? fat smt smt 1.219 1.548 0.192 0.70 0.73 v t p1220fbh v t p9812fh v tt 9812fh sr10spd 470-0.9 sr10spd 525-0.9 a i s c min short c ircuit c u rrent @ h = 1 00fc, 2850 k 0.7 0.7 100 - - i d typ dark c u rrent - - - - - na i d max 10 10 100 0.03 0.03 c j typ junction c a pacitance - - - 150 100 pf c j max 18 18 - - - radio- metric sensitivity @ p 0.27 0.034 7 0.18 0.25 nm r a n g e spectral range 400-700 400-700 450-700 380-556 480-560 nm p peak wave- length 550 580 585 470 525 ambie n t light se n s ors p h otodiode s & - t r an s i s t or s for high-volu m e a p plication s lef: spectrally adapted photodiodes and phototransistors right: c30737ph series t-1? (to-like) trough-hole package (4.9 mm diameter) v tt 9812fh o u tput versus low light levels graph 2 light c u rrent (a) light level (fc) 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 spectrally adapted photodiodes and phototransistors responsivity @ 25 c v t t 9 812fh i r -bl o c ? graph 1 re (a/w/cm 2 ) wavelength (nm) 7.00e-01 6.00e-01 5.00e-01 4.00e-01 3.00e-01 2.00e-01 1.00e-01 0.00e-01 300 11001000900800700600500400 a pplications ? interior and exterior light switching (dusk/dawn switch) ? interior and exterior light control (dimming) ? automotive headlight dimmer ? display contrast control ? energy conservation ? oil burner fame monitoring f eatures and benefts ? response approaching human eye using excelitas ir-bloc? technology ? perfect light sensor in conjunction with excelitas pyroelectric detectors for motion controlled light switches ? rohs compliant ? selectable wavelength detection range ? small footprint ? surface mount packages na pf a/w
26 www.excelitas.com fast r espo n s e sili c o n p h otodiodes for in d u s trial a n d commer c i al a p pli c a tio n s p r oduct d e scription photodiodes in this series have been designed for low junction capacitance. te lower the capacitance, the faster the response of the photodiode when the rc time constant is your limiting factor. also, speed can be further increased by reverse biasing the photodiodes. tese devices have excellent response in the ir region and are well matched to ir leds (vte series). some photodiodes are available in packages which incorporate a visible rejection flter, efectively blocking light below 700 n m. photodiodes made with the vtp process are suitable for operation under reverse bias conditions but may be used in the photovoltaic mode. typical reverse breakdown voltages are around 140 v. low dark currents under reverse bias are also a feature of this series. silicon photodiodes C v t p series product table electrical characteristics at t ambient = 25 c symbol mm 2 package active area short c i rcuit c u rrent dark c u rrent junction c a pacitance radiometric sensitivity @ p spectral range peak wavelength active area flat sidelooker irt flat sidelooker to-46 to-46 lensed lensed ceramic t-1? fat t-1? t-1? fat t-1? irt t-1? fat irt t1 t1 irt 7.45 7.45 1.6 1.6 11 1.219 2.326 2.326 2.326 2.326 0.684 0.684 v t p 100h v t p 100 c h v t p 1012h v t p 1112h v t p 1188sh v t p 1220fbh v t p 1232h v t p 1232fh v t p 1332h v t p 1332fh v t p 3310lah v t p 3410lah min i s c a 35 50 10 30 200 (typ) 0.7 100 21 75 17 24 15 max i d na 30 30 7 7 30 10 25 25 25 25 35 35 max c j pf 50 50 6 6 300 18 180 180 180 180 25 25 typ s r a/w 0.5 0.55 0.55 0.55 0.55 0.27 0.6 0.6 0.55 0.55 0.55 0.55 r a n g e 725 - 1150 400 - 1150 400 - 1150 400 - 1150 400 - 1100 400 - 7 25 400 - 1100 400 - 1100 725 - 1150 725 - 1150 400 - 1150 700 - 1150 p nm 925 925 925 925 925 550 920 920 920 920 925 925 typ nep w / hz 2.5 x 10 -14 9.0 x 10 -14 8.7 x 10 -14 8.7 x 10 -14 - - - - - - 1.9 x 10 -13 1.9 x 10 -13 p h otodiode s & - t r an s i s t or s for high-volu m e a p plication s silicon photodiodes C vtp series silicon photodiodes C vtp series a pplications ? smoke detection ? barcode scanning ? light meters ? pulse oximeters f eatures and benefts ? visible to ir spectral range ? integral visible rejection flters available ? 1 to 2 % linearity over 7 to 9 decades ? low dark currents ? high shunt resistance ? low capacitance nm
27 www.excelitas.com * typical characteristic curves @ 25 c (unless otherwise noted) silicon photodiodes C v t p series product table electrical characteristics at t ambient = 25 c symbol u n it mm 2 package short c i rcuit c u rrent dark c u rrent junction c a pacitance radiometric sensitivity @ p spectral range peak wavelength lensed sidelooker ceramic ceramic to-5 to-8 lateral lateral irt lensed sidelooker irt ceramic 8 m m ceramic mini-dip mini-dip irt smt clear plastic smt irt 6 m m ceramic t-1? fat smt 7.45 21 21 7.45 20.6 0.684 0.684 5.27 7.45 5.16 7.45 7.45 5.269 5.269 1.6 1.548 0.73 v t p 413h v t p 4085h v t p 4085sh v t p 5050h v t p 6060h v t p 7110h v t p 7210h v t p 7840h v t p 8350h v t p 8440h v t p 8551h v t p 8651h v t p 8740_ t r h v t p 8840_ t r h v t p 9412h v t p 9812fh sr10spd 880-0.9 min i s c a 120 (typ) 200 (typ) 200 (typ) 40 120 6 5 50 65 30 50 35 75 50 10 0.7 - max i d na 30 100 50 18 35 35 35 20 30 15 30 30 20 20 7 10 0.01 c j 50 500 500 24 60 25 25 40 50 15 50 50 50 50 6 18 - typ s r a/w 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.5 0.6 0.6 0.55 0.034 - ra n g e nm 400 - 1150 400 - 1100 400 - 1100 400 - 1150 400 - 1150 400 - 1150 700 - 1150 725 - 1150 400 - 1150 400 - 1150 400 - 1150 725 - 1150 400 - 1150 725 - 1150 400 - 1150 400 - 7 00 820-935 p nm 925 925 925 925 925 925 925 925 925 925 925 925 925 925 925 580 890 active area typ nep w / hz 2.3 x 10 -14 - - 1.4 x 10 -13 1.9 x 10 -13 1.9 x 10 -13 1.9 x 10 -13 5.3 x 10 -14 1.8 x 10 -13 1.3 x 10 -13 1.8 x 10 -13 2.0 x 10 -13 2.0 x 10 -13 2.0 x 10 -13 8.7 x 10 -14 - - absolute spectral response* graph 1 radiometric sensitivity, a/ w w avelength (mm) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 200 400 600 800 1000 1200 CC q.e. = 0.50 CC glass window or epoxy coated CC q.e. = 0.75 CC visible blocking flter rel. junction c a pacitance vs. voltage* graph 4 relative c a pacitance bias voltage (volts) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 2 0 -2 -4 -6 -8 -10 -12 -14 -16 t e mp. c o effcient of light c u rrent vs. wavelength* graph 5 temperature c o effcient (%) / degree ( c ) w avelength (mm) 0.5 0.4 0.3 0.2 0.1 0 -0.1 -0.2 400 1200 1000 800 600 CC small area CC large area rel. short c i rcuit c u rrent vs. i l lumination* graph 6 relative short c i rcuit c u rrent illumination (fc @ 2 850 k ) 10000 1000 100 10 1 0.1 0.01 0.01 10000 1000 100 10 1 0.1 silicon photodiodes C vtp series relative dark c u rrent vs. t e mperature* graph 3 relative dark c u rrent temperature (degrees c ) 1 000 100 10 1 0.1 0 100 75 50 25 0.10.1 1 rise/fall t i mes C n o n saturated* graph 2 response time (sec 10 C 9 0 % ) r l c j product (sec) 10 1 0.1 0.01 0 1 10 CC photovoltaic CC v = 10 v CC r. c . limit active area max pf
28 www.excelitas.com i n d u s tr y s ta n d ard sili c o n p h otodiodes p r oduct d e scription te vtd series are photodiodes which have been used in many applications as replacement for competitive devices. silicon photodiodes C v t d series product table symbol u n it industry equivalent cld31aa bpw34 bpw34f bpw34 bpw34f sfh205 sfh205k sfh206 sfh206k s1723-04 v t d 31aah v t d 34h v t d 34fh v t d 34smh v t d 34fsmh v t d 205h v t d 205kh v t d 206h v t d 206kh v t h 2090h package ceramic mini-dip mini-dip smt smt to-92 to-92 to-92 to-92 black ceramic mm 2 active area 16.73 7.45 7.45 7.45 7.45 7.41 7.41 7.41 7.41 84.64 min i s c a short c i rcuit c u rrent 150 @ 5 m w/cm 2 , 2850 k 5 0 @ 1 000 lux, 2850 k 1 5 @ 0 .5 m w/cm 2 , 940 n m 50 @ 1 000 lux, 2850 k 1 5 @ 0 .5 m w/cm 2 , 940 n m 15 @ 0 .5 m w/cm 2 , 940 n m 50 @ 1 000lux, 2850 k 1 5 @ 0 .5 m w/cm 2 , 940 n m 50 @ 1 000lux, 2850 k 6 5 @ 1 00 lux max i d na dark c u rrent 50 30 30 30 30 30 30 30 30 10 typ c j nf junction c a pacitance 0.50 0.060 0.060 0.025 0.080 0.072 0.072 0.072 0.072 0.070 typ s r a/w radiometric sensitivity @ p 0.55 0.60 0.60 0.60 0.60 0.60 0.60 0.60 0.60 0.60 r a n g e nm spectral range 400-1150 400-1100 725-1150 400-1100 725-1150 800-1100 400-1100 750-1100 400-1100 400-1100 p nm peak wavelength 860 900 940 900 940 925 925 925 925 960 typ nep w / hz n o ise equivalent power - 4.8 x 10 -14 4.8 x 10 -14 4.8 x 10 -14 4.8 x 10 -14 - - - - - p h otodiode s & - t r an s i s t or s for high-volu m e a p plication s silicon photodiodes C vtd series silicon photodiodes C vtd series a pplications ? pulse oximetry ? automotive ? surface mount assembly process f eatures and benefts ? alternate source for industry standard photodiodes ? surface mount package available ? available in package with integrated ir fltering ? large area pin available on ceramic package ? rohs compliant
figure 1 figure 3 figure 2 29 www.excelitas.com cathode .039 (1.00) nom. active area .182 (4.62) .172 (4.37) .098 nom. (2.49) optical c l .200 (5.08) nominal .130 nom. (3.30) .023 nom. (0.58) .042 (1.07) .032 (0.81) .080 (2.03) .070 (1.78) .024 x .010 nom. (0.61 x 0.25) .162 (4.11) .152 (3.86) cathode .039 (1.00) nom. active area .182 (4.62) .172 (4.37) .098 nom. (2.49) optical c l .200 (5.08) nominal .130 nom. (3.30) .023 nom. (0.58) .042 (1.07) .032 (0.81) .080 (2.03) .070 (1.78) .024 x .010 nom. (0.61 x 0.25) .162 (4.11) .152 (3.86) cathode .039 (1.00) nom. active area .182 (4.62) .172 (4.37) .098 nom. (2.49) optical c l .042 (1.07) .032 (0.81) .080 (2.03) .070 (1.78) .162 (4.11) .152 (3.86) .300 (7.62) nominal .40 (10.2) nominal .024 x .010 nom. (0.61 x 0.25) 6? nom. .000 (0.00) .008 (0.20) .75 (19.0) minimum .026 (0.66) .020 (0.51) anode cathode .275 (6.99) .245 ( 6.22) .098 (2.49) nom. .100 nom. (2.54) .100 nom. (2.54) sensitive area .023 (0.58) sq .017 (0.43) epoxy contour not controlled on this surface cathode mark .165 (4.19) .155 (3.94) .102 (2.59) r .097 (2.46) silicon photodiodes C vtd series package drawing C v t d series C sm t package package drawing C v t d series C t o - 92 package package drawing C v t d series C mini-d i p package
30 www.excelitas.com p r oduct d e scription tis series of p on n silicon planar photodiodes have been designed for optimum response through the visible part of the spectrum. units with uv transmiting windows also exhibit excellent response in the uv. b series units have a built-in infrared rejection flter for applications requiring a response approximating the human eye. photodiodes made with the vtb process are primarily intended to be used in photovoltaic mode but may be used with a small reverse bias. all photodiodes in this series exhibit very high shunt resistance. tis characteristic leads to very low ofsets when used in high gain transimpedance op-amps circuits. b l u e - en h a n c e d sili c o n p h otodiodes for in d u s trial a n d commer c i al a p pli c a tio n s v t b1012 small area planar silicon photodiode in fat window to-46 package v t b6061 large area planar silicon photodiode in a fat window to-8 package p h otodiode s & - t r an s i s t or s for high-volu m e a p plication s silicon photodiodes C vtb series ultra high dark resistance v t b4051 planar silicon photo- diode mounted on a ceramic substrate and coated with a layer of clear epoxy v t b8341 planar silicon photo- diode mounted on a ceramic substrate and coated with a layer of clear epoxy silicon photodiodes C vtb series C u ltra high dark resistance a pplications ? ambient light sensing ? uv and blue light sensing ? flame monitoring ? light meters ? photometry f eatures and benefts ? uv to ir spectral range ? integral ir rejection flters available ? response @ 365 nm, 0.14 a/w typical ? response @ 220 nm, 0.06 a/w typical with uv window ? 1 to 2 % linearity over 7 to 9 decades ? very low dark current ? high shunt resistance ? rohs compliant
31 www.excelitas.com figure 1 package drawing C v t b series C flat sidelooker package silicon photodiodes C vtb series C ultra high dark resistance silicon photodiodes C v t b series C ultra high dark resistance product table symbol u n it v t b 100ah v t b 1012h v t b 1012bh v t b 1013h v t b 1013bh v t b 1112h v t b 1112bh v t b 1113h v t b 1113bh v t b 4051h v t b 5051h v t b 5051bh v t b 5051jh v t b 5051uvh v t b 5051uvjh v t b 6061h v t b 6061bh v t b 6060 c ie h v t b 6061jh v t b 6061uvh v t b 6061uvjh v t b 8341h v t b 8440h v t b 8440bh v t b 8441h v t b 8441bh v t b 9412h v t b 9412bh v t b 9413h v t b 9413bh package flat sidelooker to-46 to-46 to-46 to-46 to-46 lensed to-46 lensed to-46 lensed to-46 lensed ceramic to-5 to-5 to-5 with 3 pins to-5 to-5 with 3 pins to-5 to-5 to-5 to-5 with 3 pins to-5 to-5 with 3 pins ceramic 8 m m ceramic 8 m m ceramic 8 m m ceramic 8 m m ceramic 6 m m ceramic 6 m m ceramic 6 m m ceramic 6 m m ceramic mm 2 active area 7.1 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 14.8 14.8 14.8 14.8 14.8 14.8 37.7 37.7 37.7 37.7 37.7 37.7 5.16 5.16 5.16 5.16 5.16 1.6 1.6 1.6 1.6 min i s c a short c ircuit c urrent @ 1 00 f c, 2850 k 50 8.0 0.80 8.0 0.80 30.0 3.0 30.0 3.0 100 85 8 85 85 85 260 26 260 260 260 35 35 4 35 4 8 0.8 8 0.8 max i d na dark c u rrent 0.50 0.10 0.10 0.02 0.02 0.10 0.10 0.02 0.02 0.25 0.25 0.25 0.25 0.25 0.25 2.0 2.0 2.0 2.0 2.0 2.0 0.10 2.0 2.0 0.10 0.10 0.10 0.10 0.02 0.02 c j nf junction c a pacitance 0.10 0.31 0.31 0.31 0.31 0.31 0.31 0.31 0.31 3.0 3.0 3.0 3.0 3.0 3.0 8.0 8.0 8.0 8.0 8.0 8.0 1.0 1.0 1.0 1.0 1.0 0.31 0.31 0.31 0.31 typ s r a/w radiometric sensitivity @ 365 nm 0.55 @ 9 25 n m 0.09 0.28 @ 5 40 n m 0.09 0.28 @ 5 40 n m 0.19 0.28 @ 5 40 n m 0.19 0.28 @ 5 40 n m 0.10 0.10 0.28 @ 5 40 n m 0.10 0.038 @ 2 20 n m 0.038 @ 2 20 n m 0.10 0.28 @ 5 40 n m 0.10 0.04 @ 2 20 n m 0.04 @ 2 20 n m 0.10 0.10 0.28 @ 5 40 n m 0.10 0.28 @ 5 40 n m 0.09 0.28 @ 5 40 n m 0.09 0.28 @ 5 40 n m r a n g e nm spectral range 400 - 1150 320 - 1100 330 - 7 20 320 - 1100 330 - 7 20 320 - 1100 330 - 7 20 320 - 1100 330 - 7 20 320 - 1100 320 - 1100 330 - 7 20 320 - 1100 200 - 1100 200 - 1100 320 - 1100 330 - 7 20 460 - 6 75 320 - 1100 200 - 1100 200 - 1100 320 - 1100 320 - 1100 330 - 7 20 320 - 1100 330 - 7 20 320 - 1100 330 - 7 20 320 - 1100 330 - 7 20 p nm peak wavelength 925 920 580 920 580 920 580 920 580 920 920 580 920 920 920 920 580 555 920 920 920 920 920 580 920 580 920 580 920 580 typ nep w / hz n o ise equivalent power 9.0 x 10 -14 3.0 x 10 -14 5.3 x 10 -14 5.9 x 10 -15 1.1 x 10 -14 3.0 x 10 -14 5.3 x 10 -14 5.9 x 10 -15 1.1 x 10 -14 2.1 x 10 -14 2.1 x 10 -14 3.7 x 10 -14 2.1 x 10 -14 2.1 x 10 -14 2.1 x 10 -14 5.7 x 10 -14 1.0 x 10 -13 1.0 x 10 -13 5.7 x 10 -14 5.7 x 10 -14 5.7 x 10 -14 2.4 x 10 -14 5.9 x 10 -14 1.1 x 10 -13 1.3 x 10 -14 2.4 x 10 -14 3.0 x 10 -14 5.3 x 10 -14 5.9 x 10 -15 1.1 x 10 -14 typ
32 www.excelitas.com figure 2 package drawing C v t b series C t o - 46 package figure 4 package drawing C v t b series C 8mm c e ramic package figure 5 package drawing C v t b series C t o - 46 lensed figure 6 package drawing C v t b series C c e ramic package figure 7 package drawing C v t b series C t o - 8 package figure 3 package drawing C v t b series C t o - 5 package silicon photodiodes C vtb series C ultra high dark resistance
33 www.excelitas.com silicon photodiodes C vtb series C ultra high dark resistance absolute spectral response graph 1 radiometric sensitivity (a / w ) wavelength (nm) 0.6 0.5 0.4 0.3 0.2 0.1 0 200 1200 1000 800 600 400 CC with u v t lens CC glass window or epoxy c o ated CC q.e. = 0.50 CC q.e. = 0.75 absolute spectral response b series (filtered) graph 2 radiometric sensitivity (a / w ) wavelength (nm) 0.6 0.5 0.4 0.3 0.2 0.1 0 200 1200 1000 800 600 400 graph 4 relative junction c a pacitance vs. voltage (refered to zero bias) relative c a pacitance bias voltage(v) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -12 2 0 -2 -4 -6 -8 -10 relative short c i rcuit c u rrent vs. i l lumination graph 5 relative short c i rcuit c u rrent illumination, fc ( 2850 k ) 10000 1000 100 10 1 0.1 0.001 0.001 10000 1000 100 10 1 0.01 CC small area CC large area rise/fall t i mes C n o n standard graph 6 response time (sec 10 C 9 0 % ) r l c j product (sec) 1000 100 10 1 0.1 100 CC small area c e lls < 5 .0 m m 2 CC large area c e lls > 1 00 m m 2 1 10 rel. c urrent or resistance vs. t emperature (refered to 25 c ) graph 3 relative dark c u rrent or resistance temperature (degree) 100 10 1 0.1 0.01 -50 100 75 50 25 0 -25 CC i d CC r d
34 www.excelitas.com p r oduct d e scription phototransistors are photodiode-amplifer combinations integrated within a single silicon chip. te phototransistor can be viewed as a photodiode whose output current is fed into the base of a conventional transistor. tese photodiode-amplifer combinations are put together to overcome the major limitation of photodiodes: unity gain. te typical gain of a phototransistor can range from 100 to over 1500. many applications demand a greater output than can be generated by a photodiode alone. even though the signal of a photodiode can be amplifed through external circuitry (operational amplifer for example) this is not always cost efective. in such cases, phototransistors provide a lower cost alternative. p h oto tra n s istors for in d u s trial a n d commer c i al a p pli c a tio n s - p h otodiode s & - t r an s i s t or s for high-volu m e a p plication s phototransistors vt series C cr series phototransistors C vtt series C c r series figure 1 package drawing C v t t series C t - 1? package a pplications ? coin counters ? position sensors ? remote controllers ? ambient light sensing ? street light switching ? oil burner fame monitoring ? safety shields ? margin control-printers ? monitor paper position and stack height f eatures and benefts ? low cost visible and near ir photo detection ? low dark current ? available in package with integrated visible fltering ? available in package with integrated ir fltering ? available in a wide range of packages ? rohs compliant c r50 te ? s urface mounting device ? s olid state ceramic chip ? h igh thermal conductivity ? s pecial type (cr50te-dlf) with daylight flter on request
35 www.excelitas.com figure 3 package drawing C v t t series C t o - 46 package figure 2 package drawing C v t t series C t - 1 package phototransistors C v t t series C c r series product table symbol u n it v t t 1 222wh v t t 1 223wh v t t 1 225h v t t 1 226h v t t 1 227h v t t 3 122 e h v t t 3 123 e h v t t 3 323lah v t t 3 324lah v t t 3 325lah v t t 3 423lah v t t 3 424lah v t t 3 425lah v t t 7 122h v t t 7 123h v t t 7 125h v t t 7 222h v t t 7 223h v t t 7 225h v t t 1 212h v t t 1 214h v t t 9 002h v t t 9 003h v t t 9 102h v t t 9 103h v t t 1 015h v t t 1 016h v t t 1 017h v t t 1 115h v t t 1 116h v t t 1 117h v t t 9 812fh c r 50 t e package t-1 ? t-1 ? t-1 ? t-1 ? t-1 ? coax hermetic coax hermetic long t-1 long t-1 long t-1 long t-1 long t-1 long t-1 lateral lateral lateral lateral lateral lateral t-1 ? t-1 ? to-106 fat to-106 fat to-106 lensed to-106 lensed to-46 to-46 to-46 to-46 lensed to-46 lensed to-46 lensed t-1 ? fat ceramic smd (a2) mm 2 exposed active area 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.19 0.63 0.63 0.63 0.63 0.63 0.63 0.19 0.18 min i c ma light c u rrent @ 1 00 f c, v c e = 5 v 1.9 1.5 4.0 7.5 12.0 1.2 4.0 2.0 @ 2 0 f c 4.0 @ 2 0 f c 6.0 @ 2 0 f c 1.0 @ 2 0 f c 2.0 @ 2 0 f c 3.0 @ 2 0 f c 1.0 2.0 4.5 0.9 1.8 4.0 2.0 @ 2 0 f c 4.0 @ 2 0 f c 2.0 5.0 6.0 13.0 0.4 1.0 2.5 1.0 @ 2 0 f c 2.0 @ 2 0 f c 4.0 @ 2 0 f c 0.10 max i c ed na dark c u rrent @ v c e = 1 0 v 10 @ vce = 20 v 10 @ vce = 20 v 100 100 100 100 @ vce = 20 v 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 @ vce = 5 v 100 @ vce = 5 v 25 @ vce = 20 v 25 @vce = 20 v 25 100 100 100 100 400 @ vce = 20 v min v br( c e o) v c ollector breakdown @ i c = 1 00 a, 0 fc 50 40 30 30 30 40 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 40 30 20 30 30 30 30 40 min v br( c e o) v emitter breakdown @ i c = 100 a, 0 fc 6.0 6.0 5.0 5.0 5.0 6.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.0 6.0 4.0 4.0 6.0 6.0 4.0 6.0 4.0 4.0 5.0 max v c e (sat) saturation voltage @ i c = 1 00 a, 1 00 f c 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.55 0.55 0.55 0.55 0.40 0.40 0.40 0.40 0.40 0.40 0.25 0.3 @ ic= 2 ma t r / t f s rise/fall time i c = 1 .0 ma rl = 1 00 angular response r a n g e nm spectral range 400 -1050 400 -1050 400 -1050 400 -1050 400 -1050 400 -1050 400 -1050 400 -1050 400 -1050 400 -1050 700 -1050 700 -1050 700 -1050 400 -1050 400 -1050 400 -1050 700 -1050 700 -1050 700 -1050 400 -1050 400 -1050 400 -1050 400 -1050 400 -1050 400 -1050 400 -1050 400 -1050 400 -1050 400 -1050 400 -1050 400 -1050 450 - 700 400 -1070 typical 1/2 ? 40 40 5 5 5 8 8 10 10 10 10 10 10 36 36 36 36 36 36 10 10 50 50 42 42 35 35 35 15 15 15 56 wide viewing angle 2.0 3.0 1.5 3.0 4.0 2.5 4.0 3.0 4.0 5.0 3.0 4.0 5.0 2.0 2.0 2.0 2.0 2.0 4.0 4.0 6.0 4.0 6.0 6.0 10.0 5.0 5.0 8.0 5.0 8.0 8.0 1.5 4.0 @ rl = 50 phototransistors C vt series C cr series v typical
36 www.excelitas.com rel. spectral response (referred to peak response of c l ear c a se) graph 1 relative output (%) wavelength (nm) 100 80 60 40 20 0 400 1100 1000 900 800 700 600 500 CC c l ear c a se CC black epoxy ir transmitting c a se relative o u tput vs. i l lumination ( n o rmalized at 100 f c) graph 2 relative output illumination, fc (2850k) 10 1 0.1 0.01 0.001 1 1000 10 100 angular response c o ax packages graph 3 relative output (%) angle of optical axis 100 80 60 40 20 0 -90 90 60 30 0 -30 -60 CC vtt312xe angular response molded e p oxy packages graph 4 relative output (%) angle of optical axis 100 80 60 40 20 0 -90 90 60 30 0 -30 -60 CC vtt122xw, vtt712x, vtt722x CC vtt121x, vtt332xla, vtt342xla CC vtt122x angular response c e ramic packages graph 5 angle of optical axis 100 80 60 40 20 0 -90 90 60 30 0 -30 -60 CC vtt900x CC vtt910x angular response 10C46 packages graph 6 relative output (%) angle of optical axis 100 80 60 40 20 0 -90 90 60 30 0 -30 -60 CC vtt101x CC vtt111x phototransistors C vt series C cr series
37 www.excelitas.com i n f rared s w it c h es u n it i p ma 0.3 0.3 6.0 i f test c o nditions ma 20 20 20 v c e v 5 5 30 d mm 2.5 2.5 50.8 v t r 16d1h v t r 17d1h v t r 24f1h i d a dark c u rrent (max) 0.1 0.1 - i f test c o nditions ma 0 0 - v c e v 5 5 - output element detector device phototransistor phototransistor photodarlington v t r series refective o p toswitch product table symbol u n it i p ma light c u rrent (min) 0.5 0.15 2 0.6 0.15 0.075 0.75 0.225 i f test c o nditions ma 20 20 20 20 20 20 20 20 v c e v 5 5 5 5 5 5 5 5 v t l 11d1h v t l 11d1-20h v t l 11d3h v t l 11d3-20h v t l 11d5-20h v t l 11d6-20h v t l 11d7h v t l 11d7-20h i d na light c u rrent (min) 100 100 100 100 100 100 100 100 i f test c o nditions ma 0 0 0 0 0 0 0 0 v c e v 10 10 10 10 10 10 10 10 v sat v saturation voltage (max) 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 i f test c o nditions ma 20 20 20 20 20 20 20 20 v c e v 0.25 0.25 1.8 1.8 0.25 0.25 0.25 0.25 none 0.50 none 0.50 0.50 0.50 none 0.50 emitter detector width width mm mm none none none none 0.25 0.12 0.50 0.50 aperture c o mbination v t l 11d series t r ansmissive o p toswitch symbol u n it i p ma 0.2 0.2 0.5 0.5 2.5 1.0 i f test c o nditions ma 20 20 20 20 20 10 v c e v 10 10 10 10 10 10 v t l 23d0a21h v t l 23d0a22h v t l 23d1a00h v t l 23d1a22h v t l 23d2a00h v t l 23d3a00h i d na light c u rrent (min) 100 100 100 100 100 100 i f test c o nditions ma 0 0 0 0 0 0 v c e v 10 10 10 10 10 10 v sat v saturation voltage (max) 0.4 0.4 0.4 0.4 0.6 0.4 i f test c o nditions ma 20 20 20 20 20 10 v c e v 0.1 0.1 0.4 0.4 1.8 0.8 0.50 0.50 1.0 0.50 1.0 1.0 emitter detector width width mm mm 0.25 0.50 1.0 0.50 1.0 1.0 aperture c o mbination v t l 23dxa series t r ansmissive o p toswitch p h otodiode s & - t r an s i s t or s for high-volu m e a p plication s infrared switches vtr C vtl infrared switches C vtr C vtl series a pplications ? coin counters ? p aper-presence detection in copiers and printers ? toner density control in copiers and printers ? object sensing ? distance detection ? position sensing ? rotational speed f eatures and benefts ? fully integrated emitter and detector assembly ? contains no mechanical parts to wear-out ? provides non-contact object sensing ? low power consumption ? small size ? low cost ? rohs compliant p r oduct d e scription excelitas optoswitches are ideal for non-contact sensing applications. tey consist of an emiter and a detector integrated in a plastic housing. te emiter is an ir led while the detector is either a pho- totransistor or a photodarlington. tese optoswitches are available either in transmissive or refective confguration. symbol light c u rrent (min) light c u rrent (min)
38 www.excelitas.com p r oduct d e scription pulsed semiconductor lasers in the near ir are commonly used for long distance time-of-fight or phase-shif range fnder systems. excelitas ofers a broad range of suited pulsed 905 nm lasers designs include multi cavity monolithic structures with up to 4 active areas per chip re sulting in up to 100 w of peak optical output power. physical stacking of laser chips resulting in up t o 300 w of peak optical output power. chip on board assemblies are available for hybrid integration. a selection of 6 metal, hermetically sealed package types are available for harsh environment applications. a molded epoxy resin to-18 type package is available for high-volume applications. critical parameters are pulse-width and rise/fall times. te pulse width may be reduced allowing for increased current drive and resulting in higher peak optical power. quantum well laser design ofers rise and fall times of < 1 ns however the drive circuit lay out and package inductance play the greater role and should be designed accordingly. excelitas ofers a variety of package types with diferent in- ductive values to assist to this end. our core competencies include: movpe wafer growth; wafer processing of the grown gaas wafers; assembly using either epoxy or solder die atach; epoxy encapsulation of lasers mounted on lead frame; hermetically sealed product qualifcation to mil std and custom requirements. high power laser d iodes for r a n g e f i n d i n g p u l s e d l a s e r d i ode s and i n frared l eds ( i reds ) pulsed laser diodes pga C pgew series pulsed laser diodes C pga C pgew series device (x = pkg) (h = rohs c o mpliance) 1 1 1 1 1 1 1 1 2 2 2 2 3 3 1 1 2 2 3 3 4 4 6 6 8 8 12 12 75 225 75 225 75 225 75 225 75 225 75 225 75 225 1 1 5 5 10 10 15 15 175 175 225 225 450 450 description total # of emitting stripes width m height m pgax1s03h pgax1s09h dpgax1s03h dpgax1s09h t p gax1s03h t p gax1s09h qpgax1s03h qpgax1s09h t p gax2s03h t p gax2s09h qpgax2s03h qpgax2s09h qpgax3s03h qpgax3s09h emitting area pga pulsed laser family selection t a ble, t y p. wavelength 905 nm, 5 mm spectral width product table 10 10 10 10 10 10 10 10 10 10 10 10 10 10 ii beam spread parallel to junction (fwhm) 25 25 25 25 25 25 25 25 25 25 25 25 25 25 beam spread perpendicular to junction (fwhm) 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 nm / c typical temperature c o effcient ? ? ? ? ? ? ? ? ? ? ? ? ? ? s metal c a n to-18 ? ? ? ? ? ? ? ? w plastic encapsulated to-18 preferred packages 30 w 5 0 w 7 5 w 1 00 w 1 50 w 2 00 w 3 00 w 225 m (9 mils) stripe width typical peak power at 30 a , 100 n s 8 w 1 5 w 2 3 w 3 3 w 4 5 w 6 5 w 9 5 w 75 m (3 mils) stripe width typical peak power at 10 a , 100 n s # of c h ips a pplications ? range fnders ? safety light curtains ? adaptive cruise control ? laser therapy f eatures and benefts ? multi cavity lasers concentrate emitting source size ? quantum well structure ? high peak pulsed power into aperture ? excellent power stability with temperature
39 www.excelitas.com peak radiant i n tensity vs. t e mperature graph 1 relative radiant intensity (%) temperature (degrees) 110 100 90 80 70 60 50 40 30 20 10 0 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 graph 2 radiant i n tensity vs. f n u mber relative radiant intensity (%) f n u mber 100 10 1 0 1 10 100 graph 3 spectral plot distribution relative radiant intensity (%) wavelength (nm) 100 50 1 880 930 905 c e nter wavelength vs. t e mperature graph 6 c e nter wavelength (nm) 920 915 910 905 900 895 890 885 880 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 radiant i n tensity vs. pulse width for safe o p eration graph 4 relative radiant intensity (%) pulse width at f whm (ns) 1000 100 10 1 10 100 1000 safe operating region figure 1 package drawing package s ( to -18) pin out 1. ld anode (+), 2. ld cathode (-) case, inductance 5.2 nh pulsed laser diodes C pga C pgew series qp6ew currently being verifed. safe o p eration region (plastic e n caps.) graph 5 relative radiant intensity (%) pulse width at fwhm (ns) 1000 100 10 0 10 100 1000 safe operating region
figure 6 figure 3 figure 2 figure 5 figure 4 40 www.excelitas.com pin out 1. (pkg flat) ld anode (+), 2. ld cathode (-), inductance 5.0 nh pin out 1. ld anode (+), 2. nc, 3. ld cathode (-) case, inductance 5.0 nh pin out 1. ld anode (+), 2. ld cathode (-) case, inductance 12 nh pin out 1. ld anode (+), 2. nc, 3. ld cathode (-) case, inductance 6.8 nh pulsed laser diodes C pga C pgew series pin out 1. ld cathode (-) chip bottom, 2. ld anode (+) chip top, inductance 1.6 nh housing / p ackage drawing ? laser chip on board package drawing package drawing package drawing package y ( c hip on c arrier) package u (5 mm c d) package c (8 C 32 c oax) package w ( to -18 plastic) package r (9 mm c d) housing / p ackage drawing ? to-18-w plastic package (1s devices only)
www.excelitas.com p r oduct d e scription ireds are solid state light sources emiting in the near infrared part of the spectrum. te emission wavelength is closely matched to the response peak of silicon photodiodes and phototransistors. te product line provides a broad range of mounting lens and power output options. both end and side radiating cases are available. wide arrays of emission beam profles are available. devices may be op- erated in either cw or pulsed operating modes. ireds can be combined with excelitas detectors or phototransistors in integrated assemblies for optoisolators, optical switches and retro sensors. optical isolators are useful when electrical isolation is required, for example to transmit control logic signals to high power switching circuits (which can be noisy). in an optical switch an object is detected when it passes between the ired and detector/ phototransistor, for example a coin counter. in a retro sensor an object is detected when the ired emited beam is refected onto the detector/photodetector. te retro sensor is used in applications were the object changes the refectance, for example detecting the end of a ply wood sheet or other manufactured material. our core competencies include: lpe wafer growth; wafer processing of the grown gaas wafers; assembly using either epoxy die atach; epoxy encapsulation of the ired leds on lead frame; her- metically sealed package. i n frared e m itting diodes ( i r e d s) C v t e product table symbol part n u mber u n it package to-46 to-46 to-46 t-1? (5 mm) t -1? (5 mm) t -1? (5 mm) t -1? (5 mm) t -1? (5 mm) t -1 (3 mm) t -1 (3 mm) l ateral 4.57 x 1 .65 m m lateral 4.57 x 1 .65 m m smd smd smd smd v t e 1 013h v t e 1 063h v t e 1 113h v t e 1 291-1h v t e 1 291-2h v t e 1 291w-1h v t e 1 291w-2h v t e 1 295h v t e 3 322lah v t e 3 324lah v t e 7 172h v t e 7 173h c r 10 i r d c r 50 i r da c r 50 i r h c r 50 i r k e e ? t yp. mw/cm 2 irradiance 2.7 5.0 15 3.3 6.5 1.6 3.3 5.5 1.3 2.6 0.6 0.8 - - - - mm distance 36 36 36 36 36 36 36 36 10.16 10.16 16.7 16.7 - - - - mm diameter 6.4 6.4 6.4 6.4 6.4 6.4 6.4 6.4 2.1 2.1 4.6 4.6 - - - - mw/sr i e min. radiant intensity 27 49 156 32 65 16 32 39 1.0 2.0 1.1 1.7 - - - - mw p o total peak power 30 80 30 20 25 20 25 20 1.5 2.5 2.5 5.0 6.3 20 10.6 11.4 ma cw ? / p ulsed ? forward test c urrent 1000 ? 1000 ? 1000 ? 100 ? 100 ? 100 ? 100 ? 100 ? 20 ? 20 ? 20 ? 20 ? 50 ? 50 ? 50 ? 50 ? v v f ? m ax forward voltage drop 2.5 3.5 2.5 2.0 2.0 2.0 2.0 2.0 1.6 1.6 1.8 1.8 2.05 1.8 1.85 1.7 ma i f ? m ax max pulsed forward c u rrent 3000 3000 3000 2500 2500 2500 2500 2500 3000 3000 2500 2500 800 800 800 800 nm wavelength 940 880 940 880 880 880 880 880 940 940 880 880 770 870 870 950 degrees ? ? b eam angle fwhm 35 35 10 12 12 25 25 8 10 10 25 25 - 90 90 90 p u l s e d l a s e r d i ode s and i n frared l eds ( i reds ) infrared emiting diodes (ireds) vte i n f rared emitti n g diodes for high - v ol u m e a p pli c a tio n s infrared emitting diodes (ireds) C vte 41 a pplications ? consumer coin readers ? lottery card readers ? position sensors C joysticks ? safety shields ? encoders C measure speed and direction ? printers C margin control ? copiers C monitor paper position or paper stack height f eatures and benefts ? end and side radiating confgurations ? selection of emission angle spread using molded lenses ? narrow band of emitted wavelengths ? minimal heat generation ? low power consumption
graph 2 figure 1 figure 2 figure 3 graph 1 to-46 lensed cap 42 www.excelitas.com infrared emiting diodes (ireds) C vte detector C emitter spacing (mm) 100 10 1 0.1 0.1 1 10 100 CC vte106x CC vte1281 / v te1285 CC vte 1 16x narrow beam angle t-1? bullet package molded lateral package .100 nom. (2.54) relative output (%) detector C emitter spacing (mm) 100 10 1 0.1 0.1 1 10 100 CC vte337xa CC vte717x CC inverse square graph 3 relative radiant output power (%) angle off optical axis 100 50 0 90 60 30 0 30 60 90 CC vte1285 CC vte1281 CC vte 1 281w CC vte 1 281f angular e m ission o n axis rel. i r radiance t - 1/lateral pack- housing / p ackage drawing C v t e 7 172 v te 7172h housing / p ackage drawing C v t e 1 113h v te 1113h housing / p ackage drawing C v t e 1 291 v te 1291h o n axis relative i r radiance

for a complete listing of our global offces, visit www.excelitas.com/ c ontactus ? 2011 excelitas technologies corp. all rights reserved. the excelitas logo and design are registered trademarks of excelitas technologies corp. all other trademarks not owned by excelitas technologies or its subsidiaries that are depicted herein are the property of their respective owners. excelitas reserves the right to change this document at any time without notice and disclaims liability for editorial, pictorial or typographical errors. 008671a_01 0211-742.14 excelitas technologies gmbh & co. kg wenzel-jaksch-str. 31 d-65199 wiesbaden germany telephone: (+49) 611 492 430 fax: (+49) 611 492 165 excelitas technologies 47 ayer rajah crescent #06-12 singapore 139947 telephone: (+65) 6775-2022 fax: (+65) 6775-1008 excelitas technologies 22001 dumberry road vaudreuil-dorion, quebec canada j7v 8p7 telephone: (+1) 450.424.3300 toll-free: (+1) 800.775.6786 fax: (+1) 450.424.3345 about excelitas technologies excelitas technologies is a global technology leader focused on delivering innovative, customized solutions to meet the lighting, detection and other high-performance technology needs of oem customers. from aerospace and defense applications to medical lighting, analytical instrumentation, clinical diagnostics, industrial, and safety and security applications, excelitas technologies is committed to enabling our customers' success in their specialty end-markets. excelitas technologies has approximately 3,000 employees in north america, europe and asia, serving customers across the world. detection@excelitas.com detection.europe@excelitas.com detection.asia@excelitas.com www.excelitas.com/detection

▲Up To Search▲

Price & Availability of VTR16D1H

	To Download VTR16D1H Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .